Infineon Technologies AG has added the new CoolGaN IPS family of integrated power stage (IPS) products to its wide portfolio of WBG power devices. The initial IPS portfolio comprises half-bridge and single-channel products aimed at low-to-medium power applications, including chargers and adapters and SMPS.
The 600V CoolGaN half-bridge IPS IGI60F1414A1L is ideal for compact and lightweight designs in the low-to-medium power range. Supplied in a thermally enhanced 8×8 QFN-28 package, it enables systems with very high-power density. The product joins two 140mOhm/600V CoolGaN e-mode HEMT switches with dedicated galvanically isolated high and low-side gate drivers out of the company’s EiceDRIVER family.
The device is easy to control due to the isolated gate driver with two digital PWM inputs. The integrated isolation function, the clean separation of digital and power ground and the decreased complexity of the PCB layout are critical in delivering shorter development time, lower system BOM and lower total cost. The gate driver’s input-to-output isolation is based on its on-chip coreless transformer technology. This guarantees high speed and outstanding robustness even for extremely fast switching transients with voltage slopes exceeding 150V/ns.
The switching behaviour of IGI60F1414A1L can be readily adapted to the demands of different applications using a few passive gate path components. This provides slew rate optimisation, for example, to reduce EMI efforts, steady-state gate current setting, and negative gate drive for hardy operation in hard-switched applications.
Moreover, due to the system-in-package integration and the highly accurate and stable propagation delay of the gate drivers, the device provides the lowest possible system dead-times. This serves to maximise system efficiency, leading to the next level of power density up to 35W/in³ for charger and adapter solutions. Flexible, easy and fast designs are also enabled for other applications, including LLC resonant topology and motor drives.