Q3 Summary of domestic compound semiconductor related contracted/started projects

contracted project

Sinosteel SiC project settled in Xi’an

On July 28th, Xixian New District Airport New City officially launched two “high-precision” projects in Beijing with Zhongke Steel Research Energy-saving Technology Co., Ltd. and Guohong Zhongjing Group Co., Ltd. to manufacture new materials for silicon carbide semiconductors and laser gyroscopes. An investment agreement was signed. The total investment of the silicon carbide semiconductor new material and laser gyroscope manufacturing project signed this time is 1.8 billion yuan. The planned land area is 130 mu, and the annual output value after the project is completed is about 1.6 billion yuan.

Roshow’s third-generation semiconductor industrial park settled in Hefei

On August 9, Roshow Technology announced that the company signed a strategic cooperation framework agreement with the People’s Government of Changfeng County, Hefei on August 8 to jointly invest in the construction of the third-generation power semiconductor (silicon carbide) industrial park. Changfeng County jointly invested in the construction of the third-generation power semiconductor (silicon carbide) industrial park, including R&D and production of silicon carbide crystal growth, substrate fabrication, epitaxial growth, etc. The total investment of the project is estimated to be 10 billion yuan.

Wingtech builds China’s first 12-inch automotive-grade fab

On August 19, China’s first 12-inch automotive-grade power semiconductor automated wafer manufacturing center project was officially signed and settled in Lingang New Area of ​​Shanghai Free Trade Zone. The total investment of the project is 12 billion yuan, and the annual production capacity is expected to be 360,000 pieces.

Xiamen Electronic Information Industry Development Conference Project Signing

On August 31, 78 projects were signed at the Xiamen Electronic Information Industry Development Conference, with a total contract value of 80.78 billion yuan, involving semiconductors and integrated circuits, computers and communication equipment, flat panel displays, software information services and other fields. Among them, there are 11 semiconductor and integrated circuit projects with a contract value of 13.5 billion yuan, including new Display MicroLED and third-generation semiconductors and other fields.

Baoshi’s third-generation semiconductor project settled in Nanjing

On September 16, at the 31st China Nanjing Golden Autumn Economic and Trade Fair, the Baishi third-generation semiconductor 6-inch wafer manufacturing project with an investment of 3 billion yuan was successfully signed in Nanjing Pukou. The project plans to use 80 acres of land to establish the third-generation semiconductor epitaxial wafer + device professional OEM. It can undertake the commissioned production orders from IDM and designhouse at home and abroad, and connect the domestic upstream and downstream industry chains to achieve the goal of making the third-generation semiconductor chips in China. The products are mainly used in 5G base stations, electric vehicles, radars, fast chargers, etc.

GaAs integrated circuit production line project settled in Jiangxi

On September 23, Ganzhou Economic and Technological Development Zone held a project signing ceremony, and 14 projects with a total investment of nearly 4.5 billion yuan were settled. There are 14 projects including the 6-inch GaAs integrated circuit chip production line project of Donghong Optoelectronics Technology Co., Ltd., and the chip design and packaging test project of Ganzhou Xinju Microelectronics Co., Ltd.

Start the project

Harbin Keyyo Semiconductor Industry-University-Research Focus Zone Project

On July 3, the construction of the Keyyou Semiconductor Industry-University-Research Cluster Project was officially started in the Jiangbei Integrated Development Zone of Harbin New District. The project covers an area of ​​45,000 square meters, and the first phase is planned to invest 1 billion yuan. It mainly builds the Sino-Russian third-generation semiconductor research institute, the Keyou semiconductor substrate preparation center, the Keyou semiconductor high-end equipment manufacturing center, and the Keyou semiconductor product inspection and testing. Center and other projects. After the project is fully put into production, an annual production capacity of nearly 100,000 high-conductivity wafers and 1,000 kilograms of high-purity semi-insulating crystals will eventually be formed; the annual production and sales of PVT-SIC crystal growth equipment will be 200 sets.

SiC material and wafer production project of Nansha Group

On July 8, the Nansha wafer silicon carbide single crystal material and wafer production project started in Nansha District, Guangzhou. It is reported that the project is located in the processing and manufacturing block of Wanqingsha Bonded Port, with a total investment of 900 million yuan. At the same time, it will build a scientific research office complex and a semiconductor workshop, expand the scale of crystal growth and processing, and increase the epitaxial wafer processing production line, so that the business can extend from crystal growth, substrate processing to epitaxy processing. After reaching production, the annual output of various substrate wafers and epitaxial wafers is 200,000 pieces, and the annual output value will reach 1.35 billion yuan.

Changsha Sanan third-generation semiconductor project

On July 20, the “San’an Optoelectronics Third-Generation Semiconductor Industrial Park”, with an investment of 16 billion yuan and an area of ​​1,000 mu, started construction in Changsha High-tech Zone. The industrial park is mainly used to build substrate (silicon carbide), epitaxy, chip and packaging industry production bases with independent intellectual property rights. Here, my country’s first SiC full industry chain production line will also be born.

On October 7, the C2 comprehensive power station has been the first to complete the capping. At the same time, the M2B silicon carbide chip production plant, the largest single building of the project, has entered the final stage of the main construction.

Branta’s third-generation semiconductor SiC project

On July 23, the third-generation semiconductor silicon carbide and sapphire substrate industrialization project of Bolante started in Jinhua, Zhejiang. Combining intelligent manufacturing with manufacturing to ignite the “booster” for the conversion of old and new kinetic energy, the development zone is fully supporting local leading enterprises to accelerate their climb to the high end of the industrial chain. The newly started project is planned to have a total investment of 1 billion yuan and will be constructed in stages. After the completion of the project, it is estimated that the annual revenue will increase by 1.25 billion yuan, the new tax payment will be 118 million yuan, and 500 new jobs will be created.

Roshow Technology Zhejiang Shaoxing SiC substrate wafer project

On July 30, Zhejiang Roshow Carbon Silicon Crystal Co., Ltd. started construction of a new silicon carbide substrate industrialization project in Shaoxing, Zhejiang. It is reported that the total planned investment of the project is 695 million yuan. The project mainly adopts silicon carbide sublimation crystal growth process and SiC substrate processing technology, and introduces 6-inch conductive crystal growth furnace and 4-inch high-purity semi-insulating crystal growth furnace with international advanced level. and other equipment, purchased domestic equipment such as multi-wire cutting machines and polishing machines, and formed an annual production capacity of 88,000 silicon carbide substrates after completion.

Tianke Heda’s third-generation semiconductor SIC substrate project

On August 17, the groundbreaking ceremony of the third-generation semiconductor silicon carbide substrate industrialization base construction project of Beijing Tianke Heda Semiconductor Co., Ltd. was held in the Southeast Industrial Zone of Daxing New Town, Huangcun Town, Daxing District, Beijing. This is a project for the research and development and production of silicon carbide crystal substrates built by Tianke Heda with self-raised funds. The total investment is about 950 million yuan, the total construction area is 55,000 square meters, and a new 400 units/set of silicon carbide single crystals is built. The silicon carbide substrate production line of the growth furnace and its supporting cutting, grinding, and polishing processing equipment is planned to be completed and put into production in early 2022, with an annual output of 120,000 silicon carbide substrates after completion.

Changzhou Wujin Compound Semiconductor Project

On September 8, the 2020 key projects in Wujin District, Changzhou started to start construction and the groundbreaking ceremony of the Xinke Habitat Intelligent Comfort System Project was held in Lijia Town. The construction of 40 projects started in a concentrated manner, with a total investment of 13.95 billion yuan and an annual planned investment of 3.25 billion yuan. The projects started this time include major industrial projects such as the new Jingyu high-end compound semiconductor project with a total investment of 3 billion yuan, and integrated circuit ecological industrial park with a total investment of 1.9 billion yuan, as well as a number of emerging industries, agriculture, and livelihood projects.

The Links:   HLM6323-040300 6MBP150RA060 7MBR150VN120-50

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